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Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure
Nong CHEN Jesse DARJA Shinichi NARATA Kenji IKEDA Kazuhiro NISHIDE Yoshiaki NAKANO
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
ridge wave guide semiconductor laser, selective undercut etching, lateral current confinement, edge emitting laser,
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In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.