Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure

Nong CHEN  Jesse DARJA  Shinichi NARATA  Kenji IKEDA  Kazuhiro NISHIDE  Yoshiaki NAKANO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.1105-1110
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.1105
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
Keyword: 
ridge wave guide semiconductor laser,  selective undercut etching,  lateral current confinement,  edge emitting laser,  

Full Text: PDF>>
Buy this Article




Summary: 
In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.