Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations

Toshiro HIRAMOTO  Toshiharu NAGUMO  Tetsu OHTOU  Kouki YOKOYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.4   pp.836-841
Publication Date: 2007/04/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.4.836
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
SOI,  body factor,  body effect,  FinFET,  multigate MOSFET,  

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The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, variable-body-factor FD SOI MOSFET and multigate MOSFET with low aspect ratio, have been proposed and their advantages are discussed.