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A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI
Fukashi MORISHITA Hideyuki NODA Isamu HAYASHI Takayuki GYOHTEN Mako OKAMOTO Takashi IPPOSHI Shigeto MAEGAWA Katsumi DOSAKA Kazutami ARIMOTO
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
SOI, capacitorless, DRAM, low power, data retention,
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We propose a novel capacitorless twin-transistor random access memory (TTRAM). The 2 Mb test device has been fabricated on 130 nm SOI-CMOS process. We demonstrate the TTRAM cell has two data-storage states and confirm the data retention time of 100 ms at 80. TTRAM process is compatible with the conventional SOI-CMOS and never requires any additional processes. A 6.1 ns row-access time is achieved and 250 MHz operation can be realized by using 2 bank 8 b-burst mode.