Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy

Tak-Keung LIANG  Kouichi AKAHANE  Naokatsu YAMAMOTO  Luis Romeu NUNES  Tetsuya KAWANISHI  Masahiro TSUCHIYA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.2   pp.409-414
Publication Date: 2007/02/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.2.409
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Evolution of Microwave and Millimeter-Wave Photonics Technology)
Category: 
Keyword: 
silicon photonics,  two-photon absorption,  optical switch,  photonic devices,  heteroepitaxy,  gallium antimonide,  

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Summary: 
Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.