Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation

Jianfeng XU
Wen-Yan YIN
Junfa MAO
Le-Wei LI

IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.1    pp.204-207
Publication Date: 2007/01/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.1.204
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Components
GaN heterojunction field-effect transistors (HFETs),  thermal simulation,  maximum temperature,  CW,  PW,  

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In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.