Low-Temperature Au-to-Au Bonding for LiNbO3/Si Structure Achieved in Ambient Air

Ryo TAKIGAWA  Eiji HIGURASHI  Tadatomo SUGA  Satoshi SHINADA  Tetsuya KAWANISHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.1   pp.145-146
Publication Date: 2007/01/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.1.145
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Microoptomechatronics)
Category: Micro/Nano Fabrication
Keyword: 
low-temperature bonding,  Au-to-Au bonding,  surface-activated bonding,  lithium niobate/silicon structure,  hybrid integration,  

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Summary: 
A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100 without generating cracks has been demonstrated.