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A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect
Jun PAN Yasuaki INOUE Zheng LIANG Zhangcai HUANG Weilun HUANG
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2007/04/01
Online ISSN: 1745-1337
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Selected Papers from the 19th Workshop on Circuits and Systems in Karuizawa)
low-power, low-voltage, CMOS, reference, body effect, temperature coefficient, back-gate,
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A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 µW, respectively. The temperature coefficient of the reference voltage is 33 ppm/ at temperatures from -40 to 100. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 µm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd=0.95-3.3 V).