Chip-Level Substrate Coupling Analysis with Reference Structures for Verification

Daisuke KOSAKA  Makoto NAGATA  Yoshitaka MURASAKA  Atsushi IWATA  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E90-A   No.12   pp.2651-2660
Publication Date: 2007/12/01
Online ISSN: 1745-1337
DOI: 10.1093/ietfec/e90-a.12.2651
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Physical Design
Keyword: 
chip-level substrate coupling,  F-matrix computation,  slice-and-stack substrate modeling,  

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Summary: 
Chip-level substrate coupling analysis uses F-matrix computation with slice-and-stack execution to include highly concentrated substrate resistivity gradient. The technique that has been applied to evaluation of device-level isolation structures against substrate coupling is now developed into chip-level substrate noise analysis. A time-series divided parasitic capacitance (TSDPC) model is equivalent to a transition controllable noise source (TCNS) circuit that captures noise generation in a CMOS digital circuit. A reference structure incorporating TCNS circuits and an array of on-chip high precision substrate noise monitors provides a basis for the verification of chip-level analysis of substrate coupling in a given technology. Test chips fabricated in two different wafer processings of 0.30-µm and 0.18-µm CMOS technologies demonstrate the universal availability of the proposed analysis techniques. Substrate noise simulation achieves no more than 3 dB discrepancy in peak amplitude compared to measurements with 100-ps/100-µV resolution, enabling precise evaluation of the impacts of the distant placements of sensitive devices from sources of noise as well as application of guard ring/band structures.