Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch

Shinzo KOYAMA  Yoshihisa KATO  Takayoshi YAMADA  Yasuhiro SHIMADA  

IEICE TRANSACTIONS on Electronics   Vol.E89-C    No.9    pp.1368-1372
Publication Date: 2006/09/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.9.1368
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Integrated Electronics
nonvolatile latch,  SBT,  fast resumption,  power management,  

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We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)2O9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.