Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors

Yahya Moubarak MEZIANI  Jerzy USAKOWSKI  Nina DYAKONOVA  Wojciech KNAP  Dalius SELIUTA  Edmundas SIRMULIS  Jan DEVENSON  Gintaras VALUSIS  Frederic BOEUF  Thomas SKOTNICKI  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.7   pp.993-998
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.993
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
CMOS,  plasma oscillations,  plasma instability,  terahertz radiation,  magnetoresistance mobility,  

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Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of these nanometer scale devices. The response was attributed to a non resonant detection. We also demonstrate the possibility to observe a resonant detection on the same devices.