For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
Masahiro ASADA Naoyuki ORIHASHI Safumi SUZUKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
resonant tunneling diode, terahertz and sub-terahertz oscillation, slot antenna, voltage-controlled oscillation, transit time,
Full Text: PDF>>
Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.