W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs

Koji INAFUNE  Eiichi SANO  Hideaki MATSUZAKI  Toshihiko KOSUGI  Takatomo ENOKI  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.7   pp.954-958
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.954
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
millimeter wave,  FDTD method,  AIA,  InP-based HEMT,  

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An active integrated antenna (AIA) oscillator consisting of an active circuit and planar antenna on the same substrate can be used as a high-performance, low-cost, small component for millimeter-to-sub-millimeter wave applications. We describe a highly extended, finite-difference-time-domain full-wave analysis method for designing AIA circuits precisely. It treats active devices as distributed elements. Using this method and 0.1-µm-gate InP-based HEMTs, we fabricated W-band AIA oscillators with an oscillation frequency of 111 GHz.