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W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs
Koji INAFUNE Eiichi SANO Hideaki MATSUZAKI Toshihiko KOSUGI Takatomo ENOKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
millimeter wave, FDTD method, AIA, InP-based HEMT,
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An active integrated antenna (AIA) oscillator consisting of an active circuit and planar antenna on the same substrate can be used as a high-performance, low-cost, small component for millimeter-to-sub-millimeter wave applications. We describe a highly extended, finite-difference-time-domain full-wave analysis method for designing AIA circuits precisely. It treats active devices as distributed elements. Using this method and 0.1-µm-gate InP-based HEMTs, we fabricated W-band AIA oscillators with an oscillation frequency of 111 GHz.