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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
heterojunction bipolar transistor, reliability, rapid thermal annealing, GaAs, InGaP,
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The effects of rapid thermal annealing (RTA) on bias-stress-induced base leakage were investigated in InGaP/GaAs collector-up heterojunction bipolar transistors (C-up HBTs) fabricated with boron ion implantation. C-up HBTs annealed at 700 for 1 s had negligible leakage, while non-annealed C-up HBTs had leakage (with an activation energy, Ea, of 0.17 eV) that exponentially increased with bias time. Because this Ea is almost the same as that of the hole traps (0.25 eV) observed in the InGaP emitters of non-annealed C-up HBTs, we attribute the leakage to hole tunneling from bases to emitters. By reducing the initial trap density using RTA, we stabilized current gain even after 1,030 h of testing at a junction temperature of 210 and a collector current density of 40 kA/cm2.