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InP DHBT Based IC Technology for over 80 Gbit/s Data Communications
Rachid DRIAD Robert E. MAKON Karl SCHNEIDER Ulrich NOWOTNY Rolf AIDAM Rudiger QUAY Michael SCHLECHTWEG Michael MIKULLA Gunter WEIMANN
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
InP, double heterojunction bipolar transistor (DHBT), integrated circuits (ICs), amplifier, voltage controlled oscillator (VCO), multiplexer (MUX),
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In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8 µm2 exhibited peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) values of 265 and 305 GHz, respectively, and a breakdown voltage (BVCEo) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for ≥ 80 Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.