Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates

Mathieu STOFFEL  Jing ZHANG  Oliver G. SCHMIDT  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.7   pp.921-925
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.921
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
SiGe,  interband tunneling diodes,  negative differential resistance,  SiGe relaxed buffers,  

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We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.