Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE

Xueliang SONG
Foo Cheong YIT
Yoshiaki NAKANO

IEICE TRANSACTIONS on Electronics   Vol.E89-C    No.7    pp.1068-1079
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.1068
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Lasers, Quantum Electronics
selective area growth,  metal-organic vapor phase epitaxy,  monolithic integration,  photonic integrated circuits,  all-optical switch,  Mach-Zehnder interferometer,  semiconductor optical amplifier,  wavelength conversion,  

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We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.