A CMOS Built-In Current Sensor for IDDQ Testing

Jeong Beom KIM  Seung Ho HONG  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.6   pp.868-870
Publication Date: 2006/06/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.6.868
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Integrated Electronics
IDDQ testing,  current testing,  BICS,  reliability,  

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This paper presents a new built-in current sensor (BICS) that detects defects using the current testing technique in CMOS integrated circuits. The proposed circuit is a negligible impact on the performance of the circuit under test (CUT). In addition, no extra power dissipation and high-speed fault detection are achieved. It can be applicable in deep sub-micron process. The area overhead of the BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix 0.35 µm standard CMOS technology.