A Leakage Reduction Scheme for Sleep Transistors with Decoupling Capacitors in the Deep Submicron Era

Kazutoshi KOBAYASHI  Akihiko HIGUCHI  Hidetoshi ONODERA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.6   pp.838-843
Publication Date: 2006/06/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.6.838
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
sleep transistor,  decoupling capacitor,  MTCMOS,  low power,  

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Summary: 
Sleep transistors such as MTCMOS and SCCMOS drastically reduce leakage current, but their ON resistances cause significant performance degradation. Larger sleep transistors reduce their ON resistances, but increase leakage current in a sleep mode. Decoupling capacitors beside sleep transistors reduce leakage current. Experimental results show that PMOS SCCMOS with a 4 pF decoupling capacitor reduces leakage current by 1/673 on a 64 bit adder in a 90 nm process.