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RF Passive Components Using Metal Line on Si CMOS
Kazuya MASU Kenichi OKADA Hiroyuki ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Analog Circuit and Device Technologies)
Si CMOS, on-chip passive, interconnect, transmission line, inductor, variable inductor, reconfigurable RF circuit,
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This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.