High Power GaN-HEMT for Wireless Base Station Applications

Toshihide KIKKAWA
Kazukiyo JOSHIN

IEICE TRANSACTIONS on Electronics   Vol.E89-C    No.5    pp.608-615
Publication Date: 2006/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.5.608
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
GaN,  HEMT,  base station,  amplifier,  W-CDMA,  

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Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000 h is demonstrated at a drain bias voltage of 60 V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.