High Performance Power MOSFETs by Wing-Cell Structure Design

Feng-Tso CHIEN  Chien-Nan LIAO  Chi-Ling WANG  Hsien-Chin CHIU  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.5   pp.591-595
Publication Date: 2006/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.5.591
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Power MOSFET,  closed cell,  wing cell,  gate-drain charge (Qgd),  

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A new cell structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. Typically, closed cell design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.