Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate

Kuk-Hwan KIM  Hyunjin LEE  Yang-Kyu CHOI  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.5   pp.578-584
Publication Date: 2006/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.5.578
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
MONOS,  SONOS,  Fowler-Nordheim tunneling,  flash memory,  asymmetric double gate,  nonvolatile memory,  

Full Text: PDF>>
Buy this Article

A 2-bit operational metal/silicon-oxide-nitride-oxide-silicon (MONOS/SONOS) nonvolatile memory using an asymmetric double-gate (ASDG) MOSFET was studied to double flash memory density. The 2-bit programming and erasing was performed by Fowler-Nordheim (FN) tunneling in a NAND array architecture using individually controlled gates. A threshold voltage shift of programmed states for the 2-bit operation was investigated with the aid of a SILVACO® simulator in both sides of the gate by changing gate workfunctions and tunneling oxide thicknesses. In this paper, the scalability of the device down to 30 nm was demonstrated by numerical simulation. Additionally, guidelines of the 2-bit ASDG nonvolatile memory (NVM) structure and operational conditions were proposed for "program," "read," and "erase."