Accurate Small-Signal Modeling of FD-SOI MOSFETs

Guechol KIM  Yoshiyuki SHIMIZU  Bunsei MURAKAMI  Masaru GOTO  Keisuke UEDA  Takao KIHARA  Toshimasa MATSUOKA  Kenji TANIGUCHI  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.4   pp.517-519
Publication Date: 2006/04/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.4.517
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
FD-SOI,  MOSFET,  RF,  modeling,  non-quasi-static,  

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A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.