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Accurate Small-Signal Modeling of FD-SOI MOSFETs
Guechol KIM Yoshiyuki SHIMIZU Bunsei MURAKAMI Masaru GOTO Keisuke UEDA Takao KIHARA Toshimasa MATSUOKA Kenji TANIGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
FD-SOI, MOSFET, RF, modeling, non-quasi-static,
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A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.