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A 1 V Phase Locked Loop with Leakage Compensation in 0.13 µm CMOS Technology
Chi-Nan CHUANG Shen-Iuan LIU
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/03/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design Technology in the Sub-100 nm Era)
Category: Low Power Techniques
phase-frequency detector, charge pump, loop filter, divider, VCO,
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In deep sub-micrometer CMOS process, owing to the thin gate oxide and small subthreshold voltage, the leakage current becomes more and more serious. The leakage current has made the impact on phase-locked loops (PLLs). In this paper, the compensation circuits are presented to reduce the leakage current on the charge pump circuit and the MOS capacitor as the loop filter. The proposed circuit has been fabricated in 0.13-µm CMOS process. The power consumption is 3 mW and the die area is 0.270.3 mm2.