A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput

Hideaki KURATA  Shunichi SAEKI  Takashi KOBAYASHI  Yoshitaka SASAGO  Tsuyoshi ARIGANE  Keiichi YOSHIDA  Yoshinori TAKASE  Takayuki YOSHITAKE  Osamu TSUCHIYA  Yoshinori IKEDA  Shunichi NARUMI  Michitaro KANAMITSU  Kazuto IZAWA  Kazunori FURUSAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.10   pp.1469-1479
Publication Date: 2006/10/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.10.1469
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
flash memory,  AG-AND,  multilevel,  high speed programming,  CCIP,  

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Summary: 
A 1-Gb AG-AND flash memory has been fabricated using 0.13-µm CMOS technology, resulting in a cell area of 0.104 µm2 and a chip area of 95.2 mm2. By applying constant-charge-injection programming and source-line-select programming, a fast page programming time of 600 µs is achieved. The four-bank operation attains a fast programming throughput of 10 MB/s in multilevel flash memories. The compact SRAM write buffers reduce the chip area penalty. A rewrite throughput of 8.3 MB/s is achieved by means of the RAM-write operation during the erase mode.