Publication IEICE TRANSACTIONS on ElectronicsVol.E89-CNo.10pp.1469-1479 Publication Date: 2006/10/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e89-c.10.1469 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, AG-AND, multilevel, high speed programming, CCIP,
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Summary: A 1-Gb AG-AND flash memory has been fabricated using 0.13-µm CMOS technology, resulting in a cell area of 0.104 µm2 and a chip area of 95.2 mm2. By applying constant-charge-injection programming and source-line-select programming, a fast page programming time of 600 µs is achieved. The four-bank operation attains a fast programming throughput of 10 MB/s in multilevel flash memories. The compact SRAM write buffers reduce the chip area penalty. A rewrite throughput of 8.3 MB/s is achieved by means of the RAM-write operation during the erase mode.