A New Linear Transconductor Combining a Source Coupled Pair with a Transconductor Using Bias-Offset Technique

Isamu YAMAGUCHI  Fujihiko MATSUMOTO  Makoto IZUMA  Yasuaki NOGUCHI  

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E89-A   No.2   pp.369-376
Publication Date: 2006/02/01
Online ISSN: 1745-1337
DOI: 10.1093/ietfec/e89-a.2.369
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
MOS transistor,  linear transconductor,  bias-offset technique,  source-coupled pair,  mobility degradation,  

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Linearity of a transconductor with a theoretical linear characteristic is deteriorated by mobility degradation, in practice. In this paper, a technique to improve the linearity by combining a source-coupled pair with the transconductor is proposed. The proposed transconductor is the circuit that the deteriorated linearity of the conventional part is compensated by the transconductance characteristic of the source-coupled pair. In order to confirm the validity of the proposed technique, SPICE simulation is carried out. The transconductance change ratio of the proposed technique is about 1% and is 1/10 or less of the conventional circuit.