On-Chip Thermal Gradient Analysis Considering Interdependence between Leakage Power and Temperature

Takashi SATO
Nobuto ONO

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E89-A    No.12    pp.3491-3499
Publication Date: 2006/12/01
Online ISSN: 1745-1337
DOI: 10.1093/ietfec/e89-a.12.3491
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Simulation and Verification
thermal gradient simulation,  leakage power,  temperature-dependent leakage power,  power calculation,  leakage model,  

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In this paper, we propose a methodology for calculating on-chip temperature gradient and leakage power distributions. It considers the interdependence between leakage power and local temperature using a general circuit simulator as a differential equation solver. The proposed methodology can be utilized in the early stages of the design cycle as well as in the final verification phase. Simulation results proved that consideration of the temperature dependence of the leakage power is critically important for achieving reliable physical designs since the conventional temperature analysis that ignores the interdependence underestimates leakage power considerably and may overlook potential thermal runaway.

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