For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect
Che-ming WANG Kuang-Po HSUEH Yue-ming HSIN
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/08/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
HBT, Kirk effect, collector doping,
Full Text: PDF>>
A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before onset of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.