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A CMOS Dual-Mode RF Front-End Receiver for GSM and WCDMA Applications
Chun-Lin KO Ming-Ching KUO Chien-Nan KUO
Publication
IEICE TRANSACTIONS on Electronics
Vol.E88-C
No.6
pp.1218-1224 Publication Date: 2005/06/01 Online ISSN:
DOI: 10.1093/ietele/e88-c.6.1218 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: RF Keyword: CMOS RF receiver, dual-mode, GSM, W-CDMA,
Full Text: PDF(829.1KB)>>
Summary:
A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 µm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 dB for the DCS1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.
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