A CMOS Dual-Mode RF Front-End Receiver for GSM and WCDMA Applications

Chun-Lin KO
Ming-Ching KUO
Chien-Nan KUO

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.6    pp.1218-1224
Publication Date: 2005/06/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.6.1218
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: RF
CMOS RF receiver,  dual-mode,  GSM,  W-CDMA,  

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A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 µm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 dB for the DCS1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.