Ultralow-Power Current Reference Circuit with Low Temperature Dependence

Tetsuya HIROSE  Toshimasa MATSUOKA  Kenji TANIGUCHI  Tetsuya ASAI  Yoshihito AMEMIYA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.6   pp.1142-1147
Publication Date: 2005/06/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.6.1142
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Building Block
Keyword: 
CMOS,  reference,  subthreshold,  weak inversion,  low power,  temperature dependence,  

Full Text: PDF>>
Buy this Article




Summary: 
An ultralow power constant reference current circuit with low temperature dependence for micropower electronic applications is proposed in this paper. This circuit consists of a constant-current subcircuit and a bias-voltage subcircuits, and it compensates for the temperature characteristics of mobility µ, thermal voltage VT, and threshold voltage VTH in such a way that the reference current has small temperature dependence. A SPICE simulation demonstrated that reference current and total power dissipation is 97.7 nA, 1.1 µW, respectively, and the variation in the reference current can be kept very small within 4% in a temperature range from -20 to 100.