Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements

Chinchun MENG  Bo-Chen TSOU  Sheng-Che TSENG  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.6   pp.1127-1132
Publication Date: 2005/06/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.6.1127
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Device
GaInP/GaAs HBT,  emitter ledge,  transit time measurement,  

Full Text: PDF(422KB)>>
Buy this Article

A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.