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Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate
Ken TSUZUKI Tadao ISHIBASHI Hiroshi YASAKA Yuichi TOHMORI
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Mach-Zehnder, modulator, InP, n-i-n, semiconductor,
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We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.