Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate

Ken TSUZUKI  Tadao ISHIBASHI  Hiroshi YASAKA  Yuichi TOHMORI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.5   pp.960-966
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.960
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Keyword: 
Mach-Zehnder,  modulator,  InP,  n-i-n,  semiconductor,  

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Summary: 
We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.