RF MOSFET Characterization by Four-Port Measurement

Shih-Dao WU  Guo-Wei HUANG  Kun-Ming CHEN  Hua-Chou TSENG  Tsun-Lai HSU  Chun-Yen CHANG  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.5   pp.851-856
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.851
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
4-port,  RF MOSFET,  common source,  common gate,  common drain,  substrate bias,  

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Summary: 
RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.