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RF MOSFET Characterization by Four-Port Measurement
Shih-Dao WU Guo-Wei HUANG Kun-Ming CHEN Hua-Chou TSENG Tsun-Lai HSU Chun-Yen CHANG
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
4-port, RF MOSFET, common source, common gate, common drain, substrate bias,
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RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.