On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs

Ming-Ta YANG
Patricia Pei-Chen HO
Tzu-Jin YEH
Darryl Chih-Wei KUO
Chin-Wei KUO

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.5    pp.838-844
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.838
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
BSIM3,  bulk effect,  compact model,  MOSFETs,  radio frequency,  

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The new design with minimum loop inductance suitable for the measurements at high frequencies with substrate bias is described. These test structures allow characterizing 4-terminal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18 µm RF CMOS technology. The BSIM3 extension RF MOSFET modeling with bulk effect is verified and analyzed from two-port Y-parameter results. The result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved.