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Characterization and Modeling of Gate-Induced-Drain-Leakage
Fabien GILIBERT Denis RIDEAU Alexandre DRAY Francois AGUT Michel MINONDO Andre JUGE Pascal MASSON Rachid BOUCHAKOUR
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
GIDL, compact model, MOSFET, electric field, trap assisted tunneling,
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We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage VDG, we also observed Trap-Assisted-Tunneling leakage current at lower VDG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.