Characterization and Modeling of Gate-Induced-Drain-Leakage

Fabien GILIBERT  Denis RIDEAU  Alexandre DRAY  Francois AGUT  Michel MINONDO  Andre JUGE  Pascal MASSON  Rachid BOUCHAKOUR  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.5   pp.829-837
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.829
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
GIDL,  compact model,  MOSFET,  electric field,  trap assisted tunneling,  

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We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage VDG, we also observed Trap-Assisted-Tunneling leakage current at lower VDG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.