RFCV Test Structure Design for a Selected Frequency Range

Wutthinan JEAMSAKSIRI  Abdelkarim MERCHA  Javier RAMOS  Stefaan DECOUTERE  Florence CUBAYNES  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.5   pp.817-823
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.817
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
capacitance,  CV,  gate dielectric,  impedance,  MOSFET,  nitride,  oxide,  RF,  S-parameters,  

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The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.