Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure

Yasumasa KAWAKITA  Suguru SHIMOTAYA  Daisuke MACHIDA  Kazuhiko SHIMOMURA  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.5   pp.1013-1019
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.1013
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
Category: Optical Passive Devices and Modules
waveguide array,  GaInAs/InP,  multiple quantum well (MQW),  wavelength demultiplexer,  optical deflector,  selective-area growth,  

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A GaInAs/InP multiple quantum well (MQW)-based wavelength demultiplexer composed of a waveguide array in which the refractive index varies across the array yielded successful results of wavelength demultiplexing and optical deflection. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by the SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), a straight waveguide grating can be formed with reduced optical propagation losses. A straight waveguide array device with a 1.4% refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, for which a wavelength separation with an approximately 25 nm spacing and free spectral range (FSR) of approximately 100 nm were obtained. Moreover, an optical deflector was investigated and primitive deflection was achieved at 1460 and 1490 nm incident wavelengths.