Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique

Katsunori MAKIHARA
Yoshihiro OKAMOTO
Seiichiro HIGASHI

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.4    pp.705-708
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.705
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
nanocrystal,  AFM,  conducting probe,  local characterization,  

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Hydrogenated germanium films were fabricated in the thickness range of 7-98 nm on SiO2 at 150 by an rf glow discharge decomposition of 0.25% GeH4 diluted with H2, and the nucleation and growth of Ge nanocrystallites were measured from topographic and current images simultaneously taken by a conductive AFM probe after Cr contact formation on films so prepared. We have demonstrated that current images show fine grains in comparison with topographic images and the lateral evolution of the Ge grains with progressive film growth. The contrast in current images can be interpreted in terms of the difference in electron concentration between nanocrystalline grains and their boundaries.