Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure

Seikoh YOSHIDA  Nariaki IKEDA  Jiang LI  Takahiro WADA  Hironari TAKEHARA  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.4   pp.690-693
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.690
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
GaN,  AlGaN,  Schottky,  SBD,  on-voltage,  

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We propose a novel Schottky barrier diode with a dual Schottky structure combined with an AlGaN/GaN heterostructure. The purpose of this diode was to lower the on-state voltage and to maintain the high reverse breakdown voltage. An AlGaN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The Schottky barrier diode with a dual Schottky structure was fabricated on the AlGaN/GaN heterostructure. As a result, the on-voltage of the diode was below 0.1 V and the reverse breakdown voltage was over 350 V.