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Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure
Seikoh YOSHIDA Nariaki IKEDA Jiang LI Takahiro WADA Hironari TAKEHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
GaN, AlGaN, Schottky, SBD, on-voltage,
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We propose a novel Schottky barrier diode with a dual Schottky structure combined with an AlGaN/GaN heterostructure. The purpose of this diode was to lower the on-state voltage and to maintain the high reverse breakdown voltage. An AlGaN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The Schottky barrier diode with a dual Schottky structure was fabricated on the AlGaN/GaN heterostructure. As a result, the on-voltage of the diode was below 0.1 V and the reverse breakdown voltage was over 350 V.