Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications

Satoshi KURACHI  Toshihiko YOSHIMASU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.4   pp.678-682
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.678
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
InGaP/GaAs HBT,  VCO,  millimeter-wave,  low phase noise,  

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Summary: 
A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.