Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates

Jang Yeon KWON  Do Young KIM  Hans S. CHO  Kyung Bae PARK  Ji Sim JUNG  Jong Man KIM  Young Soo PARK  Takashi NOGUCHI  

IEICE TRANSACTIONS on Electronics   Vol.E88-C   No.4   pp.667-671
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.667
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
poly-Si,  TFT,  plastic substrate,  

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Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm2/Vsec.