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Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates
Jang Yeon KWON Do Young KIM Hans S. CHO Kyung Bae PARK Ji Sim JUNG Jong Man KIM Young Soo PARK Takashi NOGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
poly-Si, TFT, plastic substrate,
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Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm2/Vsec.