Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition

Gou NAKAGAWA  Noritoshi SHIBATA  Tanemasa ASANO  

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.4    pp.662-666
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.662
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
poly-Si,  TFT,  metal-induced lateral crystallization,  needle-like Si,  Ni-silicide,  electric field,  

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The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 µm/h (no-electric field) to 23 µm/h at the positive electrode side and reduced to 2.8 µm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.