A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory

Shoichi MASUI
Toshiyuki TERAMOTO

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.4    pp.601-607
Publication Date: 2005/04/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.4.601
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: 
Keyword: 
radio frequency identification,  wireless communication,  nonvolatile memory,  ferroelectric random access memory,  low power design,  

Full Text: PDF>>
Buy this Article


Summary: 
A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 µW to 5 µW. The communication range for the antitheft gate system becomes 70 cm.