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MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process
Ming-Dou KER Kun-Hsien LIN Che-Hao CHUANG
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/03/01
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
electrostatic discharge (ESD), diode, poly-bounded diode, MOS-bounded diode, ESD protection,
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New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOS-bounded diodes can provide more efficient ESD protection to the internal circuits, as compared to the other diode structures. The N(P)MOS-bounded diodes can be used in the I/O ESD protection circuits, power-rail ESD clamp circuits, and the ESD conduction cells between the separated power lines. From the experimental results, the human-body-model ESD level of ESD protection circuit with the proposed N(P)MOS-bounded diodes is greater than 8 kV in a 0.35-µm CMOS process.