CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor

Kung-Hao LIANG
Chien-Chih HO
Chin-Wei KUO

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.12    pp.2372-2376
Publication Date: 2005/12/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.12.2372
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
CMOS,  active inductor,  qualify-factor,  active band-pass filter,  

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A high quality-factor of active inductor has been implemented by using the 0.18 µm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2 nH inductance at 4.3 GHz, where the self-resonant frequency was 5.4 GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2 dB and a return loss more than 32 dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4 dBm, and the noise figure was 14.1 dB with a 28 mW dc power consumption.