Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches

Atsushi FUKUDA
Yasushi YAMAO

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.11    pp.2141-2149
Publication Date: 2005/11/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.11.2141
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
band-switchable matching network,  microelectro mechanical devices,  multi-band,  switches,  power amplifiers,  

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A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.