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High-Luminance EL Devices Using Zn2Si1-XGeXO4:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets
Toshihiro MIYATA Yu MOCHIZUKI Tadatsugu MINAMI
IEICE TRANSACTIONS on Electronics
Publication Date: 2005/11/01
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
combinatorial deposition, subdivided powder targets, magnetron sputtering, phosphor, thin-film, electroluminescence,
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A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.